GD10MPS12A GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 25A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
| Anzahl | Preis |
|---|---|
| 3+ | 5.88 EUR |
| 10+ | 5.19 EUR |
| 25+ | 4.93 EUR |
| 100+ | 4.57 EUR |
| 250+ | 4.36 EUR |
| 500+ | 4.19 EUR |
| 1000+ | 4.04 EUR |
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Technische Details GD10MPS12A GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 25A TO220, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 367pF @ 1V, 1MHz, Current - Average Rectified (Io): 25A, Supplier Device Package: TO-220-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V.
Weitere Produktangebote GD10MPS12A nach Preis ab 4.03 EUR bis 5.9 EUR
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GD10MPS12A | Hersteller : GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 10A TO-220-2 SiC Schottky MPS |
auf Bestellung 1970 Stücke: Lieferzeit 10-14 Tag (e) |
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