GD10MPS12E GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO2522
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Technische Details GD10MPS12E GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO2522, Current - Reverse Leakage @ Vr: 5 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 29A, Capacitance @ Vr, F: 367pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote GD10MPS12E nach Preis ab 4.38 EUR bis 6.45 EUR
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GD10MPS12E | GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 10A TO-252-2 SiC Schottky MPS |
auf Bestellung 3138 Stücke: Lieferzeit 10-14 Tag (e) |
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GD10MPS12E | GeneSiC Semiconductor |
Description: DIODE SIL CARB 1200V 29A TO2522 Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 29A Capacitance @ Vr, F: 367pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 5800 Stücke: Lieferzeit 10-14 Tag (e) |
|
| GD10MPS12E |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 10A TO-252-2 SiC Schottky MPS
SiC Schottky Diodes 1200V 10A TO-252-2 SiC Schottky MPS
auf Bestellung 3138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.45 EUR |
| 10+ | 5.68 EUR |
| 25+ | 5.38 EUR |
| 100+ | 4.99 EUR |
| 250+ | 4.74 EUR |
| 500+ | 4.57 EUR |
| 1000+ | 4.38 EUR |
| GD10MPS12E |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO2522
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: DIODE SIL CARB 1200V 29A TO2522
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 29A
Capacitance @ Vr, F: 367pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.45 EUR |
| 10+ | 5.66 EUR |
| 25+ | 5.38 EUR |
| 100+ | 4.99 EUR |
| 250+ | 4.74 EUR |
| 500+ | 4.56 EUR |
| 1000+ | 4.39 EUR |