GD15MPS17H GeneSiC SEMICONDUCTOR
Hersteller: GeneSiC SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 15A; TO247-2; tube
Max. off-state voltage: 1.7kV
Load current: 15A
Max. forward impulse current: 120A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 2.1V
Technology: SiC
Type of diode: Schottky rectifying
Max. load current: 63A
Features of semiconductor devices: MPS
Mounting: THT
Semiconductor structure: single diode
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Technische Details GD15MPS17H GeneSiC SEMICONDUCTOR
Description: DIODE SIL CARB 1700V 36A TO2472, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A, Voltage - DC Reverse (Vr) (Max): 1700 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-2, Current - Average Rectified (Io): 36A, Capacitance @ Vr, F: 1082pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-2, Packaging: Tube.
Weitere Produktangebote GD15MPS17H nach Preis ab 12.57 EUR bis 16.7 EUR
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GD15MPS17H | Hersteller : GeneSiC Semiconductor |
SiC Schottky Diodes 1700V 15A TO-247-2 SiC Schottky MPS |
auf Bestellung 932 Stücke: Lieferzeit 10-14 Tag (e) |
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GD15MPS17H | Hersteller : GeneSiC Semiconductor |
Description: DIODE SIL CARB 1700V 36A TO2472 Current - Reverse Leakage @ Vr: 20 µA @ 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A Voltage - DC Reverse (Vr) (Max): 1700 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-2 Current - Average Rectified (Io): 36A Capacitance @ Vr, F: 1082pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-2 Packaging: Tube |
auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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