Technische Details GD2X20MPS12D GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 39A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 39A (DC), Supplier Device Package: TO-247-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 1200 V.
Weitere Produktangebote GD2X20MPS12D nach Preis ab 10.36 EUR bis 22.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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GD2X20MPS12D | GeneSiC Semiconductor |
 1200V 40A SiC Schottky MPS Diode |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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GD2X20MPS12D | GeneSiC Semiconductor |
SiC Schottky Diodes 1200V 40A TO-247-3 SiC Schottky MPS |
auf Bestellung 1948 Stücke: Lieferzeit 10-14 Tag (e) |
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GD2X20MPS12D | GeneSiC Semiconductor |
Description: DIODE ARR SIC 1200V 39A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 39A (DC) Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 1200 V |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD2X20MPS12D |
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Hersteller: GeneSiC Semiconductor
1200V 40A SiC Schottky MPS Diode
1200V 40A SiC Schottky MPS Diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 10.36 EUR |
| GD2X20MPS12D |
|
Hersteller: GeneSiC Semiconductor
SiC Schottky Diodes 1200V 40A TO-247-3 SiC Schottky MPS
SiC Schottky Diodes 1200V 40A TO-247-3 SiC Schottky MPS
auf Bestellung 1948 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.93 EUR |
| 10+ | 19.06 EUR |
| 30+ | 16.53 EUR |
| GD2X20MPS12D |
|
Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.04 EUR |
| 10+ | 19.93 EUR |
| 25+ | 19.14 EUR |
| 100+ | 18.02 EUR |