GD2X25MPS17N GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 76.45 EUR |
| 10+ | 65.79 EUR |
| 30+ | 65.68 EUR |
| 100+ | 64.5 EUR |
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Technische Details GD2X25MPS17N GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 50A SOT-227, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 50A (DC), Supplier Device Package: SOT-227, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1700 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A, Current - Reverse Leakage @ Vr: 20 µA @ 1700 V.
Weitere Produktangebote GD2X25MPS17N nach Preis ab 61.28 EUR bis 90.43 EUR
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GD2X25MPS17N | Hersteller : Navitas Semiconductor, Inc. |
 Description: DIODE MOD SIC 1700V 50A SOT-227Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 50A (DC) Supplier Device Package: SOT-227 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1700 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Current - Reverse Leakage @ Vr: 20 µA @ 1700 V |
auf Bestellung 145 Stücke: Lieferzeit 10-14 Tag (e) |
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