GD2X30MPS12D GeneSiC Semiconductor
| Anzahl | Preis |
|---|---|
| 1+ | 28.3 EUR |
| 10+ | 25.84 EUR |
| 30+ | 24.9 EUR |
| 120+ | 23.58 EUR |
| 270+ | 22.74 EUR |
| 510+ | 22.12 EUR |
| 1020+ | 21.98 EUR |
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Technische Details GD2X30MPS12D GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 55A TO247-3, Current - Reverse Leakage @ Vr: 20 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247-3, Current - Average Rectified (Io) (per Diode): 55A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote GD2X30MPS12D nach Preis ab 22.83 EUR bis 29.22 EUR
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GD2X30MPS12D | GeneSiC Semiconductor |
 Description: DIODE ARR SIC 1200V 55A TO247-3Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247-3 Current - Average Rectified (Io) (per Diode): 55A (DC) Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 569 Stücke: Lieferzeit 10-14 Tag (e) |
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| GD2X30MPS12D |
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Hersteller: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 55A TO247-3
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 55A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE ARR SIC 1200V 55A TO247-3
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 55A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 569 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 29.22 EUR |
| 10+ | 26.66 EUR |
| 25+ | 25.72 EUR |
| 100+ | 24.33 EUR |
| 250+ | 23.47 EUR |
| 500+ | 22.83 EUR |