GKR26/08 GeneSiC Semiconductor
Hersteller: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 25A DO4
Current - Reverse Leakage @ Vr: 4 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 180°C
Supplier Device Package: DO-4
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Packaging: Bulk
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Technische Details GKR26/08 GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 25A DO4, Current - Reverse Leakage @ Vr: 4 mA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 60 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -40°C ~ 180°C, Supplier Device Package: DO-4, Current - Average Rectified (Io): 25A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis, Stud Mount, Package / Case: DO-203AA, DO-4, Stud, Packaging: Bulk.
Weitere Produktangebote GKR26/08
| Foto | Bezeichnung | Hersteller | Beschreibung |
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GKR26/08 | Hersteller : GeneSiC Semiconductor |
Rectifiers Standard Recovery - 800 V - 25 A - DO-4 |
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