Technische Details HER508G Yangjie Electronic Technology
Description: DIODE GEN PURP 1KV 5A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 52pF @ 4V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: DO-201AD (DO-27), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V.
Weitere Produktangebote HER508G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
HER508G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
 Description: DIODE GEN PURP 1KV 5A DO201ADPackaging: Cut Tape (CT) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 52pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD (DO-27) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
HER508G | Yangzhou Yangjie Electronic Technology Co.,Ltd |
Description: DIODE GEN PURP 1KV 5A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Capacitance @ Vr, F: 52pF @ 4V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: DO-201AD (DO-27) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1250 Stücke Im Einkaufswagen Stück im Wert von UAH |
| HER508G | Rectron |
DO-201AD,5A,1000V,70ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
HER508G | Taiwan Semiconductor |
Rectifiers 5.0 Amp 1000 Volt 150 Amp IFSM |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| HER508G |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HER508G |
|
Hersteller: Yangzhou Yangjie Electronic Technology Co.,Ltd
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 5A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 52pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-201AD (DO-27)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Current - Reverse Leakage @ Vr: 2.5 µA @ 1000 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1250 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| HER508G |
|
Hersteller: Rectron
DO-201AD,5A,1000V,70ns
DO-201AD,5A,1000V,70ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HER508G |
|
Hersteller: Taiwan Semiconductor
Rectifiers 5.0 Amp 1000 Volt 150 Amp IFSM
Rectifiers 5.0 Amp 1000 Volt 150 Amp IFSM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH