HGT1S12N60A4DS
Produktcode: 50012
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Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote HGT1S12N60A4DS nach Preis ab 7.41 EUR bis 15.7 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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HGT1S12N60A4DS | Fairchild Semiconductor |
Description: IGBT 600V 54A TO-263AB Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-263AB Td (on/off) @ 25°C: 17ns/96ns Switching Energy: 55µJ (on), 50µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 167 W |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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HGT1S12N60A4DS | ONS/FAI |
Транзистори |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| HGT1S12N60A4DS |
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Hersteller: Fairchild Semiconductor
Description: IGBT 600V 54A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Description: IGBT 600V 54A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 7.41 EUR |
| HGT1S12N60A4DS |
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Hersteller: ONS/FAI
Транзистори
Транзистори
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.7 EUR |