HGTP3N60A4D ON Semiconductor
auf Bestellung 1200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 193+ | 2.82 EUR |
| 500+ | 2.44 EUR |
| 1000+ | 2.16 EUR |
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Technische Details HGTP3N60A4D ON Semiconductor
Description: IGBT 600V 17A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 29 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 6ns/73ns, Switching Energy: 37µJ (on), 25µJ (off), Test Condition: 390V, 3A, 50Ohm, 15V, Gate Charge: 21 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 17 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 40 A, Power - Max: 70 W.
Weitere Produktangebote HGTP3N60A4D nach Preis ab 1.85 EUR bis 2.94 EUR
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HGTP3N60A4D | Hersteller : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 17A 70W 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 2360 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTP3N60A4D | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 17A 70W 3-Pin(3+Tab) TO-220AB Rail |
auf Bestellung 21768 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTP3N60A4D | Hersteller : Fairchild Semiconductor |
Description: IGBT 600V 17A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 6ns/73ns Switching Energy: 37µJ (on), 25µJ (off) Test Condition: 390V, 3A, 50Ohm, 15V Gate Charge: 21 nC Part Status: Obsolete Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 70 W |
auf Bestellung 25328 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTP3N60A4D Produktcode: 104968
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Lieblingsprodukt
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Transistoren > MOSFET N-CH ZCODE: 8541290010 |
Produkt ist nicht verfügbar
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HGTP3N60A4D | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 17A 70W 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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HGTP3N60A4D | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 600V 17A 70000mW 3-Pin(3+Tab) TO-220AB Rail |
Produkt ist nicht verfügbar |
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HGTP3N60A4D | Hersteller : onsemi |
Description: IGBT 600V 17A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 29 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 3A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 6ns/73ns Switching Energy: 37µJ (on), 25µJ (off) Test Condition: 390V, 3A, 50Ohm, 15V Gate Charge: 21 nC Current - Collector (Ic) (Max): 17 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 70 W |
Produkt ist nicht verfügbar |
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HGTP3N60A4D | Hersteller : onsemi / Fairchild |
IGBT Transistors 600V N-Channel IGBT SMPS Series |
Produkt ist nicht verfügbar |