HGTP7N60B3D ON Semiconductor
auf Bestellung 2247 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 237+ | 2.29 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.76 EUR |
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Technische Details HGTP7N60B3D ON Semiconductor
Description: IGBT 600V 14A TO-220AB, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 37 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 26ns/130ns, Switching Energy: 160µJ (on), 120µJ (off), Test Condition: 480V, 7A, 50Ohm, 15V, Gate Charge: 37 nC, Current - Collector (Ic) (Max): 14 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 60 W.
Weitere Produktangebote HGTP7N60B3D nach Preis ab 1.51 EUR bis 2.4 EUR
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HGTP7N60B3D | Hersteller : Harris Corporation |
 Description: IGBT 600V 14A TO-220ABPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 37 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 16743 Stücke: Lieferzeit 10-14 Tag (e) |
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HGTP7N60B3D | Hersteller : Fairchild Semiconductor |
Description: IGBT 600V 14A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
auf Bestellung 2147 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGTP7N60B3D | Hersteller : HARRIS |
HGTP7N60B3D |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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| HGTP7N60B3D | Hersteller : HARRIS |
HGTP7N60B3D |
auf Bestellung 16393 Stücke: Lieferzeit 14-21 Tag (e) |
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HGTP7N60B3D | Hersteller : onsemi |
Description: IGBT 600V 14A TO-220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 37 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 160µJ (on), 120µJ (off) Test Condition: 480V, 7A, 50Ohm, 15V Gate Charge: 23 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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HGTP7N60B3D | Hersteller : onsemi / Fairchild |
IGBT Transistors PWR IGBT 14A 600V N-CHANNEL |
Produkt ist nicht verfügbar |