HUF75617D3 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 16A IPAK
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
| Anzahl | Preis |
|---|---|
| 1110+ | 0.45 EUR |
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Technische Details HUF75617D3 Fairchild Semiconductor
Description: MOSFET N-CH 100V 16A IPAK, Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I-PAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 64W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Weitere Produktangebote HUF75617D3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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HUF75617D3 | Hersteller : onsemi / Fairchild |
MOSFET 16a 100V N-Ch 0.090Ohm |
Produkt ist nicht verfügbar |
