HUFA75307T3ST Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Qualification: AEC-Q101
| Anzahl | Privatkunde |
|---|---|
| 1211+ | 0.5 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
1211 Stücke
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Produktbewertung abgeben
Technische Details HUFA75307T3ST Fairchild Semiconductor
Description: MOSFET N-CH 55V 2.6A SOT223-4, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SOT-223-4, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 1.1W (Ta), Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).
Weitere Produktangebote HUFA75307T3ST
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
HUFA75307T3ST | onsemi |
Description: MOSFET N-CH 55V 2.6A SOT223-4 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
HUFA75307T3ST | onsemi |
Description: MOSFET N-CH 55V 2.6A SOT223-4 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.1W (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
HUFA75307T3ST | onsemi / Fairchild |
MOSFET 15a 55V N-Channel UltraFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| HUFA75307T3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 55V 2.6A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 55V 2.6A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA75307T3ST |
|
Hersteller: onsemi
Description: MOSFET N-CH 55V 2.6A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 55V 2.6A SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.1W (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUFA75307T3ST |
|
Hersteller: onsemi / Fairchild
MOSFET 15a 55V N-Channel UltraFET
MOSFET 15a 55V N-Channel UltraFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH