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HUFA75309T3ST

HUFA75309T3ST Fairchild Semiconductor

FAIRS16099-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 55V 3A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 352 pF @ 25 V
auf Bestellung 34459 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
875+0.83 EUR
Mindestbestellmenge: 875
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Technische Details HUFA75309T3ST Fairchild Semiconductor

Description: MOSFET N-CH 55V 3A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-223-4, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 352 pF @ 25 V.

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HUFA75309T3ST Hersteller : FAIRCHILD HUFA75309T3ST.pdf FAIRS16099-1.pdf?t.download=true&u=5oefqw 07+ SOT-223
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUFA75309T3ST Hersteller : FAIRCHILD HUFA75309T3ST.pdf FAIRS16099-1.pdf?t.download=true&u=5oefqw SOT-223
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
HUFA75309T3ST HUFA75309T3ST Hersteller : onsemi HUFA75309T3ST.pdf Description: MOSFET N-CH 55V 3A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3A, 10V
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 352 pF @ 25 V
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