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HUFA75645S3S

HUFA75645S3S onsemi

hufa75645s3s-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+4.46 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details HUFA75645S3S onsemi

Description: MOSFET N-CH 100V 75A D2PAK, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 310W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.

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HUFA75645S3S HUFA75645S3S Fairchild Semiconductor FAIRS45983-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
104+5.22 EUR
Mindestbestellmenge: 104 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S HUFA75645S3S onsemi / Fairchild HUFA75645S3S_D-2314503.pdf MOSFETs 75a 100V N-Ch UltraFET
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.22 EUR
10+5.97 EUR
100+5.19 EUR
800+4.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S HUFA75645S3S onsemi hufa75645s3s-d.pdf Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 2096 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.48 EUR
10+6.77 EUR
100+4.88 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S FAIRCHILD FAIRS45983-1.pdf?t.download=true&u=5oefqw hufa75645s3s-d.pdf 07+ TO-263
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S FAIRS45983-1.pdf?t.download=true&u=5oefqw
HUFA75645S3S
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 100V 75A D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
104+5.22 EUR
Mindestbestellmenge: 104 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S HUFA75645S3S_D-2314503.pdf
HUFA75645S3S
Hersteller: onsemi / Fairchild
MOSFETs 75a 100V N-Ch UltraFET
auf Bestellung 756 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+7.22 EUR
10+5.97 EUR
100+5.19 EUR
800+4.46 EUR
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S hufa75645s3s-d.pdf
HUFA75645S3S
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 75A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3790 pF @ 25 V
auf Bestellung 2096 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.48 EUR
10+6.77 EUR
100+4.88 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
HUFA75645S3S FAIRS45983-1.pdf?t.download=true&u=5oefqw hufa75645s3s-d.pdf
Hersteller: FAIRCHILD
07+ TO-263
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH