IDH20G65C6 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.46 EUR |
| 25+ | 14.53 EUR |
| 50+ | 13.65 EUR |
| 100+ | 12.88 EUR |
| 250+ | 12.28 EUR |
| 500+ | 11.77 EUR |
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Technische Details IDH20G65C6 Infineon Technologies
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W, Type of diode: Schottky rectifying, Technology: CoolSiC™ 6G; SiC, Mounting: THT, Max. off-state voltage: 650V, Load current: 20A, Semiconductor structure: single diode, Case: PG-TO220-2, Max. forward voltage: 1.25V, Max. forward impulse current: 79A, Leakage current: 153µA, Power dissipation: 108W, Kind of package: tube, Heatsink thickness: 1.17...1.37mm.
Weitere Produktangebote IDH20G65C6
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IDH20G65C6 | Infineon Technologies |
 SiC Schottky Diodes SIC DIODES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
IDH20G65C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W Type of diode: Schottky rectifying Technology: CoolSiC™ 6G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: PG-TO220-2 Max. forward voltage: 1.25V Max. forward impulse current: 79A Leakage current: 153µA Power dissipation: 108W Kind of package: tube Heatsink thickness: 1.17...1.37mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDH20G65C6 |
|
Hersteller: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDH20G65C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH