Technische Details IDW10G65C5 Infineon
Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA, Max. off-state voltage: 650V, Load current: 10A, Max. forward impulse current: 46A, Case: PG-TO247-3, Max. forward voltage: 1.8V, Kind of package: tube, Semiconductor structure: single diode, Mounting: THT, Leakage current: 2µA, Power dissipation: 65W, Technology: CoolSiC™ 5G; SiC, Type of diode: Schottky rectifying.
Weitere Produktangebote IDW10G65C5
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IDW10G65C5 | Infineon Technologies |
 Schottky Diodes & Rectifiers SIC DIODES |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IDW10G65C5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA Max. off-state voltage: 650V Load current: 10A Max. forward impulse current: 46A Case: PG-TO247-3 Max. forward voltage: 1.8V Kind of package: tube Semiconductor structure: single diode Mounting: THT Leakage current: 2µA Power dissipation: 65W Technology: CoolSiC™ 5G; SiC Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IDW10G65C5 |
|
Hersteller: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODES
Schottky Diodes & Rectifiers SIC DIODES
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IDW10G65C5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; PG-TO247-3; Ir: 2uA
Max. off-state voltage: 650V
Load current: 10A
Max. forward impulse current: 46A
Case: PG-TO247-3
Max. forward voltage: 1.8V
Kind of package: tube
Semiconductor structure: single diode
Mounting: THT
Leakage current: 2µA
Power dissipation: 65W
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH