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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.12 EUR |
| 10+ | 6.81 EUR |
| 100+ | 5.68 EUR |
| 480+ | 4.14 EUR |
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Technische Details IGW75N60H3 Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A, Supplier Device Package: PG-TO247-3, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 31ns/265ns, Switching Energy: 3mJ (on), 1.7mJ (off), Test Condition: 400V, 75A, 5.2Ohm, 15V, Gate Charge: 470 nC, Part Status: Active, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 428 W.
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IGW75N60H3 Produktcode: 150038
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Transistoren > Transistoren IGBT, Leistungsmodule |
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IGW75N60H3 | Hersteller : Infineon Technologies |
Description: IGBT WITHOUT ANTI-PARALLEL DIODEPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/265ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 5.2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
Produkt ist nicht verfügbar |

