IGW75N60H3
Produktcode: 150038
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren IGBT, Leistungsmodule
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote IGW75N60H3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
IGW75N60H3 | Infineon Technologies |
Description: IGBT WITHOUT ANTI-PARALLEL DIODE Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 31ns/265ns Switching Energy: 3mJ (on), 1.7mJ (off) Test Condition: 400V, 75A, 5.2Ohm, 15V Gate Charge: 470 nC Part Status: Active Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 225 A Power - Max: 428 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IGW75N60H3 | Infineon Technologies |
IGBTs IGBT PRODUCTS TrenchStop |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IGW75N60H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 600V Power dissipation: 428W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IGW75N60H3 |
|
Hersteller: Infineon Technologies
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Description: IGBT WITHOUT ANTI-PARALLEL DIODE
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/265ns
Switching Energy: 3mJ (on), 1.7mJ (off)
Test Condition: 400V, 75A, 5.2Ohm, 15V
Gate Charge: 470 nC
Part Status: Active
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 428 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGW75N60H3 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop
IGBTs IGBT PRODUCTS TrenchStop
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGW75N60H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 75A; 428W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 600V
Power dissipation: 428W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH