IKD10N60RF Infineon Technologies
auf Bestellung 5057 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 2.18 EUR |
| 100+ | 1.69 EUR |
| 500+ | 1.44 EUR |
| 1000+ | 1.17 EUR |
| 2500+ | 1.14 EUR |
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Technische Details IKD10N60RF Infineon Technologies
Description: IKD10N60 - DISCRETE IGBT WITH AN, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 72 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A, Supplier Device Package: PG-TO252-3-313, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 12ns/168ns, Switching Energy: 190µJ (on), 160µJ (off), Test Condition: 400V, 10A, 26Ohm, 15V, Gate Charge: 64 nC, Part Status: Active, Current - Collector (Ic) (Max): 20 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 150 W.
Weitere Produktangebote IKD10N60RF
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IKD10N60RF Produktcode: 113379 |
Hersteller : Infineon |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-252-3 Vces: 600 V Vce: 2,2 V Ic 25: 20 A Ic 100: 10 А Pd 25: 150 W td(on)/td(off) 100-150 Grad: 12/168 |
Produkt ist nicht verfügbar
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IKD10N60RF | Hersteller : Infineon Technologies |
Description: IKD10N60 - DISCRETE IGBT WITH AN Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 72 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A Supplier Device Package: PG-TO252-3-313 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 12ns/168ns Switching Energy: 190µJ (on), 160µJ (off) Test Condition: 400V, 10A, 26Ohm, 15V Gate Charge: 64 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 30 A Power - Max: 150 W |
Produkt ist nicht verfügbar |