IKP10N60T
Produktcode: 101238
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Lieblingsprodukt
Hersteller:
Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote IKP10N60T nach Preis ab 1.06 EUR bis 2.38 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IKP10N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 600V; 10A; 110W; TO220AB Type of transistor: IGBT Power dissipation: 110W Case: TO220AB Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 10A Collector-emitter voltage: 600V Gate charge: 62nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 30A |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IKP10N60TXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Gate charge: 62nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 110W; TO220AB
Type of transistor: IGBT
Power dissipation: 110W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 10A
Collector-emitter voltage: 600V
Gate charge: 62nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 30A
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 36+ | 2.38 EUR |
| 46+ | 1.86 EUR |
| 53+ | 1.61 EUR |
| 72+ | 1.19 EUR |
| 100+ | 1.06 EUR |


