Technische Details IKQ75N120CT2 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3, Type of transistor: IGBT, Technology: TRENCHSTOP™ 2, Collector-emitter voltage: 1.2kV, Collector current: 75A, Power dissipation: 237W, Case: TO247-3, Gate-emitter voltage: ±20V, Pulsed collector current: 300A, Mounting: THT, Gate charge: 0.37µC, Kind of package: tube, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKQ75N120CT2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IKQ75N120CT2 | Infineon Technologies |
 IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 2 Collector-emitter voltage: 1.2kV Collector current: 75A Power dissipation: 237W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 0.37µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKQ75N120CT2 |
|
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKQ75N120CT2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Collector-emitter voltage: 1.2kV
Collector current: 75A
Power dissipation: 237W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 0.37µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH