Technische Details IKQ75N120CT2 Infineon Technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3, Mounting: THT, Pulsed collector current: 300A, Type of transistor: IGBT, Kind of package: tube, Case: TO247-3, Gate-emitter voltage: ±20V, Collector current: 75A, Collector-emitter voltage: 1.2kV, Power dissipation: 237W, Gate charge: 0.37µC, Technology: TRENCHSTOP™ 2, Features of semiconductor devices: integrated anti-parallel diode.
Weitere Produktangebote IKQ75N120CT2
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IKQ75N120CT2 | Infineon Technologies |
 IGBT Transistors INDUSTRY 14 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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IKQ75N120CT2XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3 Mounting: THT Pulsed collector current: 300A Type of transistor: IGBT Kind of package: tube Case: TO247-3 Gate-emitter voltage: ±20V Collector current: 75A Collector-emitter voltage: 1.2kV Power dissipation: 237W Gate charge: 0.37µC Technology: TRENCHSTOP™ 2 Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKQ75N120CT2 |
|
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
IGBT Transistors INDUSTRY 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKQ75N120CT2XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 237W
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 75A; 237W; TO247-3
Mounting: THT
Pulsed collector current: 300A
Type of transistor: IGBT
Kind of package: tube
Case: TO247-3
Gate-emitter voltage: ±20V
Collector current: 75A
Collector-emitter voltage: 1.2kV
Power dissipation: 237W
Gate charge: 0.37µC
Technology: TRENCHSTOP™ 2
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH