Technische Details IKW30N65WR5 Infineon technologies
Category: THT IGBT transistors, Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3, Type of transistor: IGBT, Technology: TRENCHSTOP™ 5, Power dissipation: 75W, Case: TO247-3, Mounting: THT, Gate charge: 155nC, Kind of package: tube, Pulsed collector current: 90A, Turn-on time: 51ns, Turn-off time: 376ns, Gate-emitter voltage: ±20V, Collector current: 30A, Collector-emitter voltage: 650V, Features of semiconductor devices: integrated anti-parallel diode.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IKW30N65WR5 | Infineon Technologies |
 IGBT Transistors HOME APPLIANCES 14 |
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IKW30N65WR5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 75W Case: TO247-3 Mounting: THT Gate charge: 155nC Kind of package: tube Pulsed collector current: 90A Turn-on time: 51ns Turn-off time: 376ns Gate-emitter voltage: ±20V Collector current: 30A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IKW30N65WR5 |
|
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
IGBT Transistors HOME APPLIANCES 14
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKW30N65WR5XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 75W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 75W
Case: TO247-3
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Pulsed collector current: 90A
Turn-on time: 51ns
Turn-off time: 376ns
Gate-emitter voltage: ±20V
Collector current: 30A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH