IKW40T120FKSA1 Infineon Technologies
auf Bestellung 221 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 10.32 EUR |
| 16+ | 8.72 EUR |
| 50+ | 6.35 EUR |
| 100+ | 4.73 EUR |
| 200+ | 4.45 EUR |
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Technische Details IKW40T120FKSA1 Infineon Technologies
Description: IGBT NPT FS 1200V 75A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 240 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A, Supplier Device Package: PG-TO247-3-1, IGBT Type: NPT, Trench Field Stop, Td (on/off) @ 25°C: 48ns/480ns, Switching Energy: 6.5mJ, Test Condition: 600V, 40A, 15Ohm, 15V, Gate Charge: 203 nC, Part Status: Not For New Designs, Current - Collector (Ic) (Max): 75 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 105 A, Power - Max: 270 W.
Weitere Produktangebote IKW40T120FKSA1 nach Preis ab 5.45 EUR bis 23.84 EUR
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IKW40T120FKSA1 | Hersteller : Infineon Technologies |
 IGBTs LOW LOSS DuoPack 1200V 40A |
auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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IKW40T120FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 203nC Kind of package: tube Turn-on time: 92ns Turn-off time: 700ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40T120FKSA1 | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 40A; 270W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 40A Power dissipation: 270W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 105A Mounting: THT Gate charge: 203nC Kind of package: tube Turn-on time: 92ns Turn-off time: 700ns Features of semiconductor devices: integrated anti-parallel diode Technology: TRENCHSTOP™ |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40T120FKSA1 | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IKW40T120FKSA1 - IKW40T120 DISCRETE IGBT WITH ANTI-PARAL tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 385 Stücke: Lieferzeit 14-21 Tag (e) |
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IKW40T120FKSA1 | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 75A 270000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 280 Stücke: Lieferzeit 14-21 Tag (e) |
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| IKW40T120FKSA1 | Hersteller : Infineon |
IGBT NPT, Trench Field Stop 1200V 75A 270W IKW40T120FKSA1 IKW40T120 TIKW40t120 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW40T120FKSA1 Produktcode: 152618
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Lieblingsprodukt
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Transistoren > Transistoren IGBT, Leistungsmodule |
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IKW40T120FKSA1 | Hersteller : Infineon Technologies |
Description: IGBT NPT FS 1200V 75A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 240 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT, Trench Field Stop Td (on/off) @ 25°C: 48ns/480ns Switching Energy: 6.5mJ Test Condition: 600V, 40A, 15Ohm, 15V Gate Charge: 203 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 105 A Power - Max: 270 W |
Produkt ist nicht verfügbar |