IPB95R310PFD7ATMA1
Produktcode: 206249
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Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote IPB95R310PFD7ATMA1 nach Preis ab 1.73 EUR bis 5.76 EUR
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IPB95R310PFD7ATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_NEW Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB95R310PFD7ATMA1 | Hersteller : Infineon Technologies |
Description: LOW POWER_NEW Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc) Rds On (Max) @ Id, Vgs: 310mOhm @ 10.4A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 520µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 950 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1765 pF @ 400 V |
auf Bestellung 1900 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB95R310PFD7ATMA1 | Hersteller : Infineon Technologies |
MOSFETs LOW POWER_NEW |
auf Bestellung 1985 Stücke: Lieferzeit 10-14 Tag (e) |
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IPB95R310PFD7ATMA1 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 950V 17.5A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |