IPG20N04S4-08 Infineon Technologies
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.43 EUR |
| 2500+ | 1.33 EUR |
| 5000+ | 1.29 EUR |
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Technische Details IPG20N04S4-08 Infineon Technologies
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 20A, Power dissipation: 65W, Case: PG-TDSON-8, Gate-source voltage: ±20V, On-state resistance: 7.6mΩ, Mounting: SMD, Gate charge: 28nC, Kind of channel: enhancement, Technology: OptiMOS™ T2.
Weitere Produktangebote IPG20N04S4-08
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPG20N04S4-08 | Infineon Technologies |
 Description: IPG20N04 - 20V-40V N-CHANNEL AUT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IPG20N04S408ATMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 20A Power dissipation: 65W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 28nC Kind of channel: enhancement Technology: OptiMOS™ T2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPG20N04S4-08 |
|
Hersteller: Infineon Technologies
Description: IPG20N04 - 20V-40V N-CHANNEL AUT
Description: IPG20N04 - 20V-40V N-CHANNEL AUT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPG20N04S408ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; OptiMOS™ T2; unipolar; 40V; 20A; 65W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20A
Power dissipation: 65W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 28nC
Kind of channel: enhancement
Technology: OptiMOS™ T2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH