Technische Details IPN80R750P7 Infineon
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD, Power dissipation: 7.2W, Gate charge: 17nC, Polarisation: unipolar, Version: ESD, Technology: CoolMOS™ P7, Drain current: 4.6A, Kind of channel: enhancement, Drain-source voltage: 800V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, Kind of package: reel, Case: PG-SOT223, On-state resistance: 0.75Ω, Mounting: SMD.
Weitere Produktangebote IPN80R750P7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IPN80R750P7 | Infineon Technologies |
 MOSFET LOW POWER_NEW |
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Im Einkaufswagen Stück im Wert von UAH |
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IPN80R750P7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD Power dissipation: 7.2W Gate charge: 17nC Polarisation: unipolar Version: ESD Technology: CoolMOS™ P7 Drain current: 4.6A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel Case: PG-SOT223 On-state resistance: 0.75Ω Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IPN80R750P7 |
|
Hersteller: Infineon Technologies
MOSFET LOW POWER_NEW
MOSFET LOW POWER_NEW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IPN80R750P7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Power dissipation: 7.2W
Gate charge: 17nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4.6A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-SOT223
On-state resistance: 0.75Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.6A; 7.2W; PG-SOT223; ESD
Power dissipation: 7.2W
Gate charge: 17nC
Polarisation: unipolar
Version: ESD
Technology: CoolMOS™ P7
Drain current: 4.6A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel
Case: PG-SOT223
On-state resistance: 0.75Ω
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH