IPU09N03LBG

Description: MOSFET N-CH 30V 50A TO251-3, Power Dissipation (Max): 58W (Tc), Rds On (Max) @ Id, Vgs: 9.3mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO251-3-21, Vgs(th) (Max) @ Id: 2V @ 20µA.