IR2101SPBF Infineon Technologies
Hersteller: Infineon Technologies
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
| Anzahl | Preis |
|---|---|
| 203+ | 2.64 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 2.04 EUR |
| 10000+ | 1.75 EUR |
| 100000+ | 1.4 EUR |
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Technische Details IR2101SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 100ns, 50ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 210mA, 360mA, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote IR2101SPBF nach Preis ab 1.3 EUR bis 3.59 EUR
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IR2101SPBF | Hersteller : Infineon Technologies |
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3318 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2101SPBF | Hersteller : Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 1934 Stücke: Lieferzeit 10-14 Tag (e) |
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| IR2101SPBF | Hersteller : International Rectifier/Infineon |
Драйвер MOSFET, Uживл, В = 10...20, Тип вх. сигн. = неінвертуючий, Io = 210 мА, Dt = 160 нс, Umax, B = 600, Конфіг = 1 конфігурація з верхнім і нижнім ключами, 2 виходи, Тексп, °С = -40...+125,... Група товару: Інтегральні мікросхеми Корпус: SOICN-8 Од. в Anzahl je Verpackung: 95 Stücke |
verfügbar 20 Stücke: |
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| IR2101S/PBF | Hersteller : IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
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IR2101SPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IR2101SPBF - IR2101S - GATE DRIVER tariffCode: 85423190 euEccn: TBC hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
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| IR2101SPBF | Hersteller : International Rectifier |
SO8 Lead Free Група товару: Мікросхеми драйверів MOSFET/IGBT Од. вим: шт |
Produkt ist nicht verfügbar |
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IR2101SPBF | Hersteller : Infineon Technologies |
Gate Drivers HI LO SIDE DRVR 600V 130mA 50ns |
Produkt ist nicht verfügbar |