IR2101SPBF Infineon Technologies
Hersteller: Infineon Technologies
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
| Anzahl | Privatkunde |
|---|---|
| 203+ | 3.18 EUR |
| 500+ | 2.82 EUR |
| 1000+ | 2.55 EUR |
| 10000+ | 2.23 EUR |
| 100000+ | 1.83 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IR2101SPBF Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Voltage - Supply: 10V ~ 20V, Input Type: Non-Inverting, High Side Voltage - Max (Bootstrap): 600 V, Supplier Device Package: 8-SOIC, Rise / Fall Time (Typ): 100ns, 50ns, Channel Type: Independent, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, MOSFET (N-Channel), Logic Voltage - VIL, VIH: 0.8V, 3V, Current - Peak Output (Source, Sink): 210mA, 360mA, Part Status: Not For New Designs, DigiKey Programmable: Not Verified.
Weitere Produktangebote IR2101SPBF nach Preis ab 1.59 EUR bis 4.4 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IR2101SPBF | Infineon Technologies |
 Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3318 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
|
|
IR2101SPBF | Infineon Technologies |
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube |
auf Bestellung 3318 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||||
 |
IR2101SPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Not For New Designs DigiKey Programmable: Not Verified |
auf Bestellung 1453 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||||
| IR2101SPBF | International Rectifier/Infineon |
Драйвер MOSFET, Uживл, В = 10...20, Тип вх. сигн. = неінвертуючий, Io = 210 мА, Dt = 160 нс, Umax, B = 600, Конфіг = 1 конфігурація з верхнім і нижнім ключами, 2 виходи, Тексп, °С = -40...+125,... Інтегральні мікросхеми Корпус: SOICN-8 Од. вим: шт Anzahl je Verpackung: 95 Stücke |
verfügbar 20 Stücke: |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| IR2101S/PBF | IR |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IR2101SPBF |
|
Hersteller: Infineon Technologies
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
auf Bestellung 3318 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.61 EUR |
| 63+ | 2.74 EUR |
| 74+ | 2.26 EUR |
| 95+ | 2.15 EUR |
| 100+ | 2.06 EUR |
| 190+ | 1.96 EUR |
| 250+ | 1.88 EUR |
| 285+ | 1.84 EUR |
| 500+ | 1.8 EUR |
| IR2101SPBF |
|
Hersteller: Infineon Technologies
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
Driver 600V 2-OUT High Side/Low Side Inv/Non-Inv 8-Pin SOIC N Tube
auf Bestellung 3318 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 3.64 EUR |
| 62+ | 2.69 EUR |
| 73+ | 2.2 EUR |
| 95+ | 2.06 EUR |
| 100+ | 1.92 EUR |
| 190+ | 1.78 EUR |
| 250+ | 1.68 EUR |
| 285+ | 1.64 EUR |
| 500+ | 1.59 EUR |
| IR2101SPBF |
|
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
auf Bestellung 1453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.4 EUR |
| 10+ | 3.26 EUR |
| 95+ | 2.68 EUR |
| 190+ | 2.56 EUR |
| 285+ | 2.5 EUR |
| 570+ | 2.42 EUR |
| 1045+ | 2.34 EUR |
| IR2101SPBF |
|
Hersteller: International Rectifier/Infineon
Драйвер MOSFET, Uживл, В = 10...20, Тип вх. сигн. = неінвертуючий, Io = 210 мА, Dt = 160 нс, Umax, B = 600, Конфіг = 1 конфігурація з верхнім і нижнім ключами, 2 виходи, Тексп, °С = -40...+125,... Інтегральні мікросхеми Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke
Драйвер MOSFET, Uживл, В = 10...20, Тип вх. сигн. = неінвертуючий, Io = 210 мА, Dt = 160 нс, Umax, B = 600, Конфіг = 1 конфігурація з верхнім і нижнім ключами, 2 виходи, Тексп, °С = -40...+125,... Інтегральні мікросхеми Корпус: SOICN-8 Од. вим: шт
Anzahl je Verpackung: 95 Stücke
verfügbar 20 Stücke:
| IR2101S/PBF |
Hersteller: IR
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)