IRF4905STRLPBF INFINEON TECHNOLOGIES
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel
| Anzahl | Preis |
|---|---|
| 21+ | 3.49 EUR |
| 32+ | 2.3 EUR |
| 50+ | 1.86 EUR |
| 100+ | 1.7 EUR |
| 250+ | 1.5 EUR |
| 500+ | 1.43 EUR |
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Technische Details IRF4905STRLPBF INFINEON TECHNOLOGIES
Description: MOSFET P-CH 55V 42A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IRF4905STRLPBF nach Preis ab 1.66 EUR bis 5.53 EUR
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IRF4905STRLPBF Produktcode: 173205
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Transistoren > Transistoren P-Kanal-Feld |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 2874 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 211 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC |
auf Bestellung 17883 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 16717 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 19485 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Hersteller : INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 200W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.02ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 19585 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF4905STRLPBF | Hersteller : International Rectifier/Infineon |
P-канальний ПТ, Id = 42 А, Ptot, Вт = 170, Udss, В = 55, Тип монт. = smd, Ciss, пФ @ Uds, В = 3500 @ 25, Qg, нКл = 180 @ 10 В, Rds = 20 мОм @ 42 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Група товару: Транзистори Корпус: D2PAK Од. вим: Anzahl je Verpackung: 36 Stücke |
verfügbar 11 Stücke: |
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IRF4905STRLPBF | Hersteller : Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
Produkt ist nicht verfügbar |
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| IRF4905STRLPBF | Hersteller : International Rectifier |
D2Pak, Vdss=-55V, Id=-42A, Rds(on)=20mOm, -55...+150 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRF4905STRLPBF | Hersteller : International Rectifier |
MOSFET P-CH 55V 42A D2PAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRF4905STRLPBF | Hersteller : JSMSEMI |
D2Pak, Vdss=-55V, Id=-42A, Rds(on)=20mOm, -55...+150 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRF4905STRLPBF | Hersteller : Infineon |
MOSFET P-CH 55V 42A D2PAK Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |