IRF4905STRLPBF
Produktcode: 173205
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Hersteller:
Transistoren > Transistoren P-Kanal-Feld
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Technische Details IRF4905STRLPBF
- MOSFET, P, 55V, D2-PAK
- Transistor Type:MOSFET
- Max Voltage Vds:55V
- On State Resistance:0.02ohm
- Transistor Case Style:D2-PAK
- Alternate Case Style:TO-262AB
- Case Style:D2-PAK
- Cont Current Id:74A
- Max Voltage Vgs th:4V
- Min Voltage Vgs th:2V
- Power Dissipation Pd:200W
- Pulse Current Idm:260A
- Termination Type:SMD
- Transistor Polarity:P
- Typ Voltage Vds:55V
- Typ Voltage Vgs th:4V
- Voltage Vds:55V
- Voltage Vgs Rds on Measurement:10V
Weitere Produktangebote IRF4905STRLPBF nach Preis ab 1.7 EUR bis 8.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 10400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 200W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 18311 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -55V Drain current: -74A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
auf Bestellung 3206 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W. |
auf Bestellung 1262 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
Description: MOSFET P-CH 55V 42A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
auf Bestellung 10703 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF4905STRLPBF | INFINEON |
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), OberflächenmontagetariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 74A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 200W SVHC: Lead (25-Jun-2025) Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 20V Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 18311 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4905STRLPBF | Infineon Technologies |
MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC |
auf Bestellung 5326 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRF4905STRLPBF | International Rectifier/Infineon |
P-канальний ПТ, Id = 42 А, Ptot, Вт = 170, Udss, В = 55, Тип монт. = smd, Ciss, пФ @ Uds, В = 3500 @ 25, Qg, нКл = 180 @ 10 В, Rds = 20 мОм @ 42 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: D2PAK Од. вим: штAnzahl je Verpackung: 36 Stücke |
verfügbar 11 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.24 EUR |
| 1600+ | 2.19 EUR |
| 2400+ | 2.12 EUR |
| 4000+ | 2.05 EUR |
| 5600+ | 1.8 EUR |
| 8000+ | 1.75 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.28 EUR |
| 1600+ | 2.23 EUR |
| 2400+ | 2.15 EUR |
| 4000+ | 2.08 EUR |
| 5600+ | 1.83 EUR |
| 8000+ | 1.78 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.67 EUR |
| 1600+ | 2.39 EUR |
| 2400+ | 2.23 EUR |
| 4000+ | 2.05 EUR |
| 5600+ | 1.9 EUR |
| 8000+ | 1.77 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.71 EUR |
| 1600+ | 2.53 EUR |
| 2400+ | 2.44 EUR |
| 4000+ | 2.37 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.73 EUR |
| 1600+ | 2.45 EUR |
| 2400+ | 2.27 EUR |
| 4000+ | 2.09 EUR |
| 5600+ | 1.95 EUR |
| 8000+ | 1.82 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: INFINEON
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 200W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.02ohm
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 200W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.02ohm
auf Bestellung 18311 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 3.58 EUR |
| 500+ | 3.37 EUR |
| 1000+ | 2.78 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -74A; 200W; D2PAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -74A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
auf Bestellung 3206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 4.46 EUR |
| 29+ | 3.03 EUR |
| 33+ | 2.62 EUR |
| 50+ | 2.34 EUR |
| 100+ | 2.13 EUR |
| 250+ | 1.87 EUR |
| 500+ | 1.71 EUR |
| 800+ | 1.7 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.62 EUR |
| 45+ | 3.81 EUR |
| 100+ | 2.68 EUR |
| 800+ | 2.05 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
P-channel MOSFET with a maximum continuous drain current of 74 A, maximum operating voltage of 55 V, and maximum power dissipation of 170 W.
auf Bestellung 1262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 32+ | 5.62 EUR |
| 45+ | 3.89 EUR |
| 100+ | 2.78 EUR |
| 800+ | 2.17 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET P-CH 55V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
auf Bestellung 10703 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.58 EUR |
| 10+ | 4.97 EUR |
| 100+ | 3.49 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: INFINEON
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 200W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.02ohm
Description: INFINEON - IRF4905STRLPBF - Leistungs-MOSFET, p-Kanal, 55 V, 74 A, 0.02 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 74A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: -
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 200W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 20V
Drain-Source-Durchgangswiderstand: 0.02ohm
auf Bestellung 18311 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 8.2 EUR |
| 46+ | 5.08 EUR |
| 100+ | 3.58 EUR |
| 500+ | 3.37 EUR |
| 1000+ | 2.78 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC
MOSFETs MOSFT PCh -55V -74A 20mOhm 120nC
auf Bestellung 5326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.52 EUR |
| 10+ | 4.93 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.08 EUR |
| 800+ | 2.84 EUR |
| 2400+ | 2.68 EUR |
| IRF4905STRLPBF |
![]() |
Hersteller: International Rectifier/Infineon
P-канальний ПТ, Id = 42 А, Ptot, Вт = 170, Udss, В = 55, Тип монт. = smd, Ciss, пФ @ Uds, В = 3500 @ 25, Qg, нКл = 180 @ 10 В, Rds = 20 мОм @ 42 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: D2PAK Од. вим: шт
Anzahl je Verpackung: 36 Stücke
P-канальний ПТ, Id = 42 А, Ptot, Вт = 170, Udss, В = 55, Тип монт. = smd, Ciss, пФ @ Uds, В = 3500 @ 25, Qg, нКл = 180 @ 10 В, Rds = 20 мОм @ 42 A, 10 В, Tексп, °C = -55...+150, Ugs(th) = 4 В @ 250 мкА,... Транзистори Корпус: D2PAK Од. вим: шт
Anzahl je Verpackung: 36 Stücke
verfügbar 11 Stücke:
Mit diesem Produkt kaufen
| MIC2940A-3.3WU(IC) Produktcode: 47242
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| 2,2uF 50V X5R 10% 0805 (CL21A225KBFNNNE-Samsung) Produktcode: 149389
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Hersteller: Samsung
Kondensatoren SMD > Kondensatoren 0805
Kapazität: 2,2 мкФ
Nennspannung: 50 В
Dielektrikum: X5R
Präzision: ±10% K
Größentyp: 0805
Kondensatoren SMD > Kondensatoren 0805
Kapazität: 2,2 мкФ
Nennspannung: 50 В
Dielektrikum: X5R
Präzision: ±10% K
Größentyp: 0805
auf Bestellung 9740 St.:
Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.07 EUR |
| 100+ | 0.058 EUR |
| 1000+ | 0.046 EUR |
| SN74HC244DW Produktcode: 165094
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Lieblingsprodukt
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Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRF4905PBF Produktcode: 22366
17
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Lieblingsprodukt
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Hersteller: IR
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Id, A: 74 A
Durchlasswiderstand Rds(on), Ohm: 0,02 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 3400/180
Montage: THT
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 55 V
Drain-Strom Id, A: 74 A
Durchlasswiderstand Rds(on), Ohm: 0,02 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 3400/180
Montage: THT
auf Bestellung 1885 St.:
Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.9 EUR |
| 10+ | 1.71 EUR |
| 100+ | 1.55 EUR |
| 51 Ohm 1% 0,125W 150V 0805 (RC0805FR-51R-Hitano) (Widerstand SMD) Produktcode: 19311
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Lieblingsprodukt
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Hersteller: Hitano
Widerstande SMD > SMD-Widerstande 0805
Nennwert: 51 Ohm
Toleranz: ±1% F
P Nenn., W: 0,125 W
U Betrieb, V: 150 V
Bauform: 0805
Widerstande SMD > SMD-Widerstande 0805
Nennwert: 51 Ohm
Toleranz: ±1% F
P Nenn., W: 0,125 W
U Betrieb, V: 150 V
Bauform: 0805
auf Bestellung 794 St.:
Lieferzeit 21-28 Tag (e)
erwartet 10000 St.:
10000 St. - erwartet 10.08.2026| Anzahl | Privatkunde |
|---|---|
| 10+ | 0.006 EUR |









