IRF710 SILI
Produktcode: 123225
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Lieblingsprodukt
Hersteller: SILI
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 400 В
Drain-Strom Idd, A: 2 А
Durchlasswiderstand Rds(on), Ohm: 3,6 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 170/17
Montage: THT
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Technische Details IRF710 SILI
- MOSFET, N TO-220
- Transistor Type:MOSFET
- Transistor Polarity:N
- Cont Current Id:1.5A
- On State Resistance:3.6ohm
- Case Style:TO-220AB
- Current Temperature:25`C
- Full Power Rating Temperature:25`C
- Lead Spacing:2.54mm
- Max Voltage Vds:400V
- No. of Pins:3
- No. of Transistors:1
- Pin Configuration:a
- Pin Format:1 g
- 2 d/tab
- 3 s
- Power Dissipation:20W
- Power Dissipation Pd:20W
- Pulse Current Idm:6A
- Transistor Case Style:TO-220AB
Weitere Produktangebote IRF710 nach Preis ab 0.75 EUR bis 1.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF710 | onsemi |
 Description: MOSFET N-CH 400V 2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 4400 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Harris Corporation |
Description: MOSFET N-CH 400V 2A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Fairchild Semiconductor |
Description: MOSFET N-CH 400V 2A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Obsolete Vgs (Max): ±20V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V |
auf Bestellung 18893 Stücke: Lieferzeit 10-14 Tag (e) |
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IRF710 | Siliconix |
N-MOSFET 0.8A 400V 20W 3.6Ω IRF710 IRF710 TIRF710 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 60 Stücke: Lieferzeit 7-14 Tag (e) |
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| IRF710 | ON Semiconductor |
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 18893 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 | ON Semiconductor |
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 4400 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 | HARRIS |
IRF710 |
auf Bestellung 4630 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRF710 |
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Hersteller: onsemi
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.2A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 4400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 505+ | 1.06 EUR |
| IRF710 |
|
Hersteller: Harris Corporation
Description: MOSFET N-CH 400V 2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Description: MOSFET N-CH 400V 2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 4630 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 505+ | 1.06 EUR |
| IRF710 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
Description: MOSFET N-CH 400V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.1A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Obsolete
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 25 V
auf Bestellung 18893 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 505+ | 1.06 EUR |
| IRF710 |
|
Hersteller: Siliconix
N-MOSFET 0.8A 400V 20W 3.6Ω IRF710 IRF710 TIRF710
Anzahl je Verpackung: 10 Stücke
N-MOSFET 0.8A 400V 20W 3.6Ω IRF710 IRF710 TIRF710
Anzahl je Verpackung: 10 Stücke
auf Bestellung 60 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 1.57 EUR |
| IRF710 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB
auf Bestellung 18893 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 701+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| 10000+ | 0.75 EUR |
| IRF710 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH Si 400V 1.5A 3-Pin(3+Tab) TO-220AB
auf Bestellung 4400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 701+ | 0.94 EUR |
| 1000+ | 0.86 EUR |
| IRF710 |
|
Hersteller: HARRIS
IRF710
IRF710
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 701+ | 0.94 EUR |
| 1000+ | 0.86 EUR |