IRFD120PBF

Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: HVMDIP-4
Uds,V: 100 V
Idd,A: 1,3 A
Rds(on), Ohm: 0,3 Ohm
Ciss, pF/Qg, nC: 450/11
JHGF: THT

Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: HVMDIP
Uds,V: 100 V
Idd,A: 1,3 A
Rds(on), Ohm: 0,27 Ohm
Ciss, pF/Qg, nC: 360/16
JHGF: THT

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP
Packaging: Bulk
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 4-HVMDIP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V

Hersteller: Vishay / Siliconix
MOSFETs HVMDIP 100V 1.3A N-CH MOSFET