IRFP254B ON Semiconductor
| Anzahl | Preis |
|---|---|
| 385+ | 1.41 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.13 EUR |
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Technische Details IRFP254B ON Semiconductor
Description: N-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V, Power Dissipation (Max): 221W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3P, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V.
Weitere Produktangebote IRFP254B nach Preis ab 1.13 EUR bis 1.45 EUR
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IRFP254B | ON Semiconductor |
 Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-3P |
auf Bestellung 1419 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFP254B | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V Power Dissipation (Max): 221W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V |
auf Bestellung 11382 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IRFP254B |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-3P
Trans MOSFET N-CH 250V 25A 3-Pin(3+Tab) TO-3P
auf Bestellung 1419 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 385+ | 1.41 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.13 EUR |
| IRFP254B |
|
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 12.5A, 10V
Power Dissipation (Max): 221W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 25 V
auf Bestellung 11382 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 308+ | 1.45 EUR |