IRFS820B Fairchild Semiconductor

Description: N-CHANNEL POWER MOSFET, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 2.6Ohm @ 1.25A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tj), FET Type: N-Channel.