IRFW620BTM Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.13W (Ta), 47W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
| Anzahl | Preis |
|---|---|
| 701+ | 0.69 EUR |
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Technische Details IRFW620BTM Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 3.13W (Ta), 47W (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 2.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V.