IRGIB15B60KD1P

Hersteller: Infineon Technologies
Description: IGBT 600V 19A 52W TO220FP
Power - Max: 52 W
Current - Collector Pulsed (Icm): 38 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 19 A
Gate Charge: 56 nC
Test Condition: 400V, 15A, 22Ohm, 15V
Switching Energy: 127µJ (on), 334µJ (off)
Td (on/off) @ 25°C: 30ns/173ns
IGBT Type: NPT
Supplier Device Package: TO-220AB Full-Pak
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Reverse Recovery Time (trr): 67 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube

Hersteller: Infineon Technologies
IGBT Transistors 600V Low-Vceon

Hersteller: INFINEON
Description: INFINEON - IRGIB15B60KD1P - IGBT, 19 A, 2.2 V, 52 W, 600 V, TO-220FP, 3 Pin(s)
Transistormontage: Durchsteckmontage
Kollektor-Emitter-Sättigungsspannung: 2.2
Verlustleistung: 52
Bauform - Transistor: TO-220FP
Anzahl der Pins: 3
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 600
Betriebstemperatur, max.: 175
Kontinuierlicher Kollektorstrom: 19
SVHC: No SVHC (27-Jun-2018)