Technische Details IRGP30B60KD-EP Infineon / IR
Description: IGBT NPT 600V 60A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 125 ns, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A, Supplier Device Package: TO-247AD, IGBT Type: NPT, Td (on/off) @ 25°C: 46ns/185ns, Switching Energy: 350µJ (on), 825µJ (off), Test Condition: 400V, 30A, 10Ohm, 15V, Gate Charge: 102 nC, Current - Collector (Ic) (Max): 60 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 304 W.
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IRGP30B60KD-EP Produktcode: 94717
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 Transistoren > Transistoren IGBT, Leistungsmodule |
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IRGP30B60KD-EP | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 60A 304000mW 3-Pin(3+Tab) TO-247AC Tube |
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IRGP30B60KD-EP | Hersteller : Infineon Technologies |
Description: IGBT NPT 600V 60A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 125 ns Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Supplier Device Package: TO-247AD IGBT Type: NPT Td (on/off) @ 25°C: 46ns/185ns Switching Energy: 350µJ (on), 825µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 102 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 304 W |
Produkt ist nicht verfügbar |