IRGS6B60KDTRLP
Produktcode: 59298
Hersteller: IRGehäuse: DPAK
Vces: 600
Vce: 1,8
Ic 25: 13
Ic 100: 7
Pd 25: 90
td(on)/td(off) 100-150 Grad: 25/215
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Weitere Produktangebote IRGS6B60KDTRLP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRGS6B60KDTRLP | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 600V 13A 90000mW 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRGS6B60KDTRLP | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRGS6B60KDTRLP | Hersteller : Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
Produkt ist nicht verfügbar |
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IRGS6B60KDTRLP | Hersteller : Infineon Technologies |
Description: IGBT 600V 13A 90W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
Produkt ist nicht verfügbar |
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IRGS6B60KDTRLP | Hersteller : Infineon / IR |
IGBT Transistors 600V 5A |
Produkt ist nicht verfügbar |
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IRGS6B60KDTRLP | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; 600V; 13A; 90W; D2PAK; single transistor Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 13A Power dissipation: 90W Case: D2PAK Mounting: SMD Kind of package: reel Semiconductor structure: single transistor Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |