IRL2910L

Description: MOSFET N-CH 100V 55A TO262, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: TO-262, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube.