ISL9N302AS3 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 30V 75A TO-262AA
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 345W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Produktrezensionen
Produktbewertung abgeben
Technische Details ISL9N302AS3 Fairchild Semiconductor
Description: MOSFET N-CH 30V 75A TO-262AA, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: I2PAK (TO-262), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 345W (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA.
Weitere Produktangebote ISL9N302AS3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
ISL9N302AS3 | onsemi |
Description: MOSFET N-CH 30V 75A I2PAK Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: I2PAK (TO-262) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 345W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ISL9N302AS3 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 345W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 30V 75A I2PAK
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: I2PAK (TO-262)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 345W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH