Technische Details IXER35N120D1 IXYS
Description: IGBT 1200V 50A 200W TO247, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 80 ns, Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A, Supplier Device Package: ISOPLUS247™, IGBT Type: NPT, Switching Energy: 5.4mJ (on), 2.6mJ (off), Test Condition: 600V, 35A, 39Ohm, 15V, Gate Charge: 150 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 200 W.
Weitere Produktangebote IXER35N120D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IXER35N120D1 | Hersteller : IXYS |
 |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
||
|
IXER35N120D1 Produktcode: 152305 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
|
|||
 |
IXER35N120D1 | Hersteller : IXYS |
Description: IGBT 1200V 50A 200W TO247 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 35A Supplier Device Package: ISOPLUS247™ IGBT Type: NPT Switching Energy: 5.4mJ (on), 2.6mJ (off) Test Condition: 600V, 35A, 39Ohm, 15V Gate Charge: 150 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
|
| IXER35N120D1 | Hersteller : IXYS |
IGBT Transistors 1200V 50A |
Produkt ist nicht verfügbar |