Technische Details IXER60N120
- IGBT, ISOPLUS247
- Transistor Type:IGBT
- DC Collector Current:95A
- Max Voltage Vce Sat:2.1V
- Max Power Dissipation:375W
- Collector-to-Emitter Breakdown Voltage:1.2kV
- Operating Temperature Range:-55`C to +150`C
- Case Style:ISOPLUS-247
- Fall Time Tf:50ns
- Junction to Case Thermal Resistance A:0.33`C/W
- Max Current Ic Continuous a:95A
- Pin Configuration:Single
- Power Dissipation:375W
- Rise Time:50ns
- Termination Type:Through Hole
- Transistor Polarity:NPN
- Voltage Vces:1200V
Weitere Produktangebote IXER60N120
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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IXER60N120 | Hersteller : IXYS |
 Description: IGBT 1200V 95A 375W ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 60A Supplier Device Package: ISOPLUS247™ IGBT Type: NPT Switching Energy: 7.2mJ (on), 4.8mJ (off) Test Condition: 600V, 60A, 22Ohm, 15V Gate Charge: 350 nC Part Status: Obsolete Current - Collector (Ic) (Max): 95 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 375 W |
Produkt ist nicht verfügbar |
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| IXER60N120 | Hersteller : IXYS |
IGBT Transistors 60 Amps 1200V |
Produkt ist nicht verfügbar |