Technische Details IXFH88N20Q
Description: MOSFET N-CH 200V 88A TO247AD, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V, Current - Continuous Drain (Id) @ 25°C: 88A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-247AD (IXFH), Vgs(th) (Max) @ Id: 4V @ 4mA.
Weitere Produktangebote IXFH88N20Q
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IXFH88N20Q | Hersteller : IXYS |
Description: MOSFET N-CH 200V 88A TO247AD Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 44A, 10V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Drain to Source Voltage (Vdss): 200 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-247AD (IXFH) Vgs(th) (Max) @ Id: 4V @ 4mA |
Produkt ist nicht verfügbar |
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IXFH88N20Q | Hersteller : IXYS |
MOSFET 88 Amps 200V 0.03 Rds |
Produkt ist nicht verfügbar |



