IXFT20N80P
Hersteller:
MOSFET 800V 20A 520 mOhm TO-268 Транзистори
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Technische Details IXFT20N80P
Description: MOSFET N-CH 800V 20A TO268, Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V, Power Dissipation (Max): 500W (Tc), Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-268AA, Vgs(th) (Max) @ Id: 5V @ 4mA.
Weitere Produktangebote IXFT20N80P
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IXFT20N80P | Hersteller : IXYS |
Description: MOSFET N-CH 800V 20A TO268 Input Capacitance (Ciss) (Max) @ Vds: 4685 pF @ 25 V Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-268AA Vgs(th) (Max) @ Id: 5V @ 4mA |
Produkt ist nicht verfügbar |
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IXFT20N80P | Hersteller : IXYS |
MOSFETs 20 Amps 800V 0.52 Rds |
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IXFT20N80P | Hersteller : IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268 Case: TO268 Drain current: 20A Power dissipation: 500W Drain-source voltage: 800V Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Kind of package: tube Polarisation: unipolar Gate charge: 86nC On-state resistance: 0.52Ω |
Produkt ist nicht verfügbar |




