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IXFX180N07


IXFK%2C%20IXFX180N07.pdf
Hersteller:
PLUS247 Транзистори
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Technische Details IXFX180N07

Description: MOSFET N-CH 70V 180A PLUS247, Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V, Drain to Source Voltage (Vdss): 70 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PLUS247™-3, Vgs(th) (Max) @ Id: 4V @ 8mA, Power Dissipation (Max): 568W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube.

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IXFX180N07 IXFX180N07 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_180n07_datasheet.pdf.pdf Description: MOSFET N-CH 70V 180A PLUS247
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 420 nC @ 10 V
Drain to Source Voltage (Vdss): 70 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PLUS247™-3
Vgs(th) (Max) @ Id: 4V @ 8mA
Power Dissipation (Max): 568W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
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IXFX180N07 IXFX180N07 Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_180n07_datasheet.pdf.pdf MOSFET 70V 180A
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