IXFX64N50P Ixys Corporation
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 26.34 EUR |
| 60+ | 23.82 EUR |
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Technische Details IXFX64N50P Ixys Corporation
Description: MOSFET N-CH 500V 64A PLUS247-3, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V, Power Dissipation (Max): 830W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 8mA, Supplier Device Package: PLUS247™-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V.
Weitere Produktangebote IXFX64N50P nach Preis ab 27.09 EUR bis 42.2 EUR
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IXFX64N50P | Hersteller : IXYS |
 MOSFET 64.0 Amps 500 V 0.09 Ohm Rds |
auf Bestellung 1583 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFX64N50P Produktcode: 88763 |
Transistoren > Transistoren IGBT, Leistungsmodule |
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IXFX64N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 |
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IXFX64N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 64A 3-Pin(3+Tab) PLUS 247 |
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IXFX64N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFX64N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 64A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 32A, 10V Power Dissipation (Max): 830W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8700 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXFX64N50P | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 64A; 830W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 64A Power dissipation: 830W Case: PLUS247™ On-state resistance: 85mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |