IXSH35N120B
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Транзистори
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Technische Details IXSH35N120B
Description: IGBT PT 1200V 70A TO-247AD, Power - Max: 300 W, Current - Collector Pulsed (Icm): 140 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 70 A, Part Status: Obsolete, Gate Charge: 120 nC, Test Condition: 960V, 35A, 5Ohm, 15V, Switching Energy: 5mJ (off), Td (on/off) @ 25°C: 36ns/160ns, IGBT Type: PT, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXSH35N120B
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IXSH35N120B | Hersteller : IXYS |
Description: IGBT PT 1200V 70A TO-247AD Power - Max: 300 W Current - Collector Pulsed (Icm): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 70 A Part Status: Obsolete Gate Charge: 120 nC Test Condition: 960V, 35A, 5Ohm, 15V Switching Energy: 5mJ (off) Td (on/off) @ 25°C: 36ns/160ns IGBT Type: PT Supplier Device Package: TO-247AD Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 35A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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| IXSH35N120B | Hersteller : IXYS |
IGBT Transistors 70 Amps 1200V 3.6 Rds |
Produkt ist nicht verfügbar |