IXTH50N30
Hersteller:
TO247 Транзистори
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Technische Details IXTH50N30
Description: MOSFET N-CH 300V 50A TO247, Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Drain to Source Voltage (Vdss): 300 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-247 (IXTH), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 400W (Tc), Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXTH50N30
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTH50N30 | IXYS |
Description: MOSFET N-CH 300V 50A TO247 Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Drain to Source Voltage (Vdss): 300 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-247 (IXTH) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 400W (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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| IXTH50N30 |
Hersteller: IXYS
Description: MOSFET N-CH 300V 50A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: MOSFET N-CH 300V 50A TO247
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247 (IXTH)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 400W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH