IXTK250N10
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Technische Details IXTK250N10
Description: MOSFET N-CH 100V 250A TO264, Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-264 (IXTK), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 730W (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Box.
Weitere Produktangebote IXTK250N10
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTK250N10 | Hersteller : IXYS |
Description: MOSFET N-CH 100V 250A TO264 Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 430 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-264 (IXTK) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 730W (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 90A, 10V Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-264-3, TO-264AA Packaging: Box |
Produkt ist nicht verfügbar |