Produkte > MOTOROLA > JAN2N6766

JAN2N6766 MOTOROLA


77270-lds-0101-datasheet
Hersteller: MOTOROLA

auf Bestellung 2100 Stücke:

Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details JAN2N6766 MOTOROLA

Description: MOSFET N-CH 200V 30A TO3, Qualification: MIL-PRF-19500/543, Grade: Military, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Drain to Source Voltage (Vdss): 200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AE, Packaging: Bulk.

Weitere Produktangebote JAN2N6766

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
JAN2N6766 Microsemi Corporation 77270-lds-0101-datasheet Description: MOSFET N-CH 200V 30A TO3
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JAN2N6766 77270-lds-0101-datasheet
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO3
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH