Technische Details JAN2N6770 IR/MOT
Description: MOSFET N-CH 500V 12A TO204AE, Qualification: MIL-PRF-19500/543, Grade: Military, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-204AE (TO-3), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 4W (Ta), 150W (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-204AE, Packaging: Bulk.
Weitere Produktangebote JAN2N6770
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JAN2N6770 | Microsemi Corporation |
 Description: MOSFET N-CH 500V 12A TO204AEQualification: MIL-PRF-19500/543 Grade: Military Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-204AE (TO-3) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 4W (Ta), 150W (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-204AE Packaging: Bulk |
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Im Einkaufswagen Stück im Wert von UAH | |
| JAN2N6770 | Microchip / Microsemi |
MOSFET N Channel MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N6770 |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 500V 12A TO204AE
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE (TO-3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
Description: MOSFET N-CH 500V 12A TO204AE
Qualification: MIL-PRF-19500/543
Grade: Military
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-204AE (TO-3)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-204AE
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6770 |
|
Hersteller: Microchip / Microsemi
MOSFET N Channel MOSFET
MOSFET N Channel MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH